The neutron irradiation test is performed to determine the susceptibility of semiconductor devices to degradation in the neutron environment. The tests described herein are applicable to intergrated circuits and discrete semiconductor devices. This test is intended for military- and space-related applications. This is a destructive test. The objectives of this test are as follows: a) to detect and measure the degradation of critical semiconductor device parameters as a function of neutron fluence, and b) to determine if specified semiconductor device parameters are within specified limits after exposure to a a specified level of neutron fluence (see Clause 4).